Investigation of charging/discharging phenomena in nano-crystal memories

被引：16

作者：

De Salvo, B

Ghibaudo, G

Pananakakis, G

Guillaumot, B

Baron, T

机构：

[1] CEA, LETI, F-38054 Grenoble 9, France

[2] ENSERG, LPCS, F-38016 Grenoble, France

[3] ST Microelect, Grenoble, France

[4] INSA, LPM, Villeurbanne, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 28卷 / 5-6期

关键词：

nano-crystal memories; charging/discharging phenomena;

D O I：

10.1006/spmi.2000.0931

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work we will give a detailed account of the charging/discharging phenomena occurring in semiconductor nano-crystal memories. Memory transfer characteristics and write/erase transient characteristics are studied for devices with different technological parameters. Experimental results are explained by means of a semi-classical model, based on a modified current continuity approach. This model depicts the effect of the tunnel/top dielectric thickness, dot recovered area and programming voltage on the device performance. (C) 2000 Academic Press.

引用

页码：339 / 344

页数：6

共 10 条

[1] Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices
Baron, T
Martin, F
Mur, P
Wyon, C
Dupuy, M
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) : 1004 - 1008
[2] SiO2- and ONO-induced substrate current in silicon field-effect transistors
De Salvo, B
Ghibaudo, G
Pananakakis, G
Mondon, F
[J]. SOLID-STATE ELECTRONICS, 1998, 42 (10) : 1839 - 1847
[3] Transport process in thin SiO2 films with an embedded 2-D array of Si nanocrystals
De Salvo, B
Luthereau, P
Baron, T
Ghibaudo, G
Martin, F
Fraboulet, D
Reimbold, G
Gautier, J
[J]. MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) : 863 - 866
[4] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
LENZLINGER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +
[5] Critical MOSFETs operation for low voltage low power IC's: Ideal characteristics, parameter extraction, electrical noise and RTS fluctuations
Ghibaudo, G
[J]. MICROELECTRONIC ENGINEERING, 1997, 39 (1-4) : 31 - 57
[6] GROESENEKEN G, 1998, NVSM TECHNOLOGY
[7] MOS memory using germanium nanocrystals formed by thermal oxidation of Si1-xGex
King, YC
King, TJ
Hu, CM
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 115 - 118
[8] Tiwari S, 1996, APPL PHYS LETT, V68, P1377, DOI 10.1063/1.116085
[9] Tiwari S, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P521, DOI 10.1109/IEDM.1995.499252
[10] WAHL JA, 1999, IEDM

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