Order-disorder transitions under confinement

被引:16
作者
Diaz-Ortiz, A [1 ]
Sanchez, JM
Moran-Lopez, JL
机构
[1] Univ Texas, Texas Mat Inst, Austin, TX 78712 USA
[2] Univ Autonoma San Luis Potosi, Inst Fis, San Luis Potosi 78000, Mexico
关键词
D O I
10.1103/PhysRevLett.81.1146
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The phase transitions in Ising thin films with antiferromagnetic interactions are studied as a function of the surface field h for symmetry-preserving surface orientations. It is found that for very large h an N-layer system undergoes a separation between its surfaces and the (N - 2) inner layers. The system comprised of the surfaces and the inner layers displays a rather unusual phase diagram with a disordered phase lying between the ordered phases down to zero temperature. For large but moderate h, both ordered regions merge at high temperatures, isolating a low-temperature disordered region. Cluster variation calculations are used to compute the finite-temperature behavior. [S0031-9007(98)06805-7].
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收藏
页码:1146 / 1149
页数:4
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