1-bit memory using one electron: Parametric oscillations in a Penning trap

被引:13
作者
Tseng, CH
Enzer, D
Gabrielse, G
Walls, FL
机构
[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
[2] Natl Inst Stand & Technol, Boulder, CO 80303 USA
来源
PHYSICAL REVIEW A | 1999年 / 59卷 / 03期
关键词
D O I
10.1103/PhysRevA.59.2094
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The parametric oscillation of a single trapped electron is studied and used to measure enhanced spontaneous emission. Hysteresis in this motion provides a 1-bit memory to store information about excitations made with the electron "in the dark." The time dependence and stability criteria for the parametric excitation are examined. The cyclotron motions for one and two electrons are also studied. [S1050-2947(99)01303-7].
引用
收藏
页码:2094 / 2104
页数:11
相关论文
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