Charge separation in coupled InAs quantum dots and strain-induced quantum dots

被引：37

作者：

Schoenfeld, WV ^{[1
]}

Lundstrom, T

Petroff, PM

Gershoni, D

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel

[3] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期

关键词：

D O I：

10.1063/1.123798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an InAs self-assembled quantum dot structure designed to spatially separate and store photo-generated electron-hole pairs. The structure consists of pairs of strain-coupled quantum dots. Separation of electron-hole pairs into the quantum dots and strain-induced quantum dots has been observed using power-dependant photoluminescence and bias-dependent photoluminescence. (C) 1999 American Institute of Physics. [S0003-6951(99)04015-2].

引用

页码：2194 / 2196

页数：3

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