A high performance CCD on high resistivity silicon

被引：10

作者：

Stover, RJ ^{[1
]}

Wei, M ^{[1
]}

Lee, Y ^{[1
]}

Gilmore, DK ^{[1
]}

Holland, SE ^{[1
]}

Groom, DE ^{[1
]}

Moses, WW ^{[1
]}

Perlmutter, S ^{[1
]}

Goldhaber, G ^{[1
]}

Pennypacker, C ^{[1
]}

Wang, NW ^{[1
]}

Palaio, N ^{[1
]}

机构：

[1] Univ Calif Santa Cruz, Lick Observ, Santa Cruz, CA 95064 USA

来源：

IMAGING SYSTEMS TECHNOLOGY FOR REMOTE SENSING | 1998年 / 3505卷

关键词：

CCD; high resistivity; fully depleted; Lick Observatory; Lawrence Berkeley National Laboratory; astronomical;

D O I：

10.1117/12.317844

中图分类号：

TP7 [遥感技术];

学科分类号：

081102 ; 0816 ; 081602 ; 083002 ; 1404 ;

摘要：

In this paper we present new results from the characterization of a fully depleted CCD on high resistivity silicon. The CCD was fabricated at Lawrence Berkeley National Laboratory on a 10-12 K Omega-cm n-type silicon substrate. The CCD is a 200x200 15-mu m square pixel array. The high resistivity of the starting material makes it possible to deplete the entire 300 mu m thick substrate. This results in improved red and near infrared response compared to a standard CCD. Because the substrate is fully depleted, thinning of the CCD is not required for backside illumination, and the results presented here were obtained with a backside illuminated device. In this paper we present measured quantum efficiency as a function of temperature, and we describe a novel clocking scheme to measure serial charge transfer efficiency. We demonstrate an industrial application in which the CCD is more than an order of magnitude more sensitive than a commercial camera using a standard CCD.

引用

页码：13 / 18

页数：6