Barrier heights, polarization switching, and electrical fatigue in Pb(Zr, Ti)O3 ceramics with different electrodes

被引：42

作者：

Chen, Feng ^{[1
]}

Schafranek, Robert ^{[1
]}

Wachau, Andre ^{[1
]}

Zhukov, Sergey ^{[1
]}

Glaum, Julia ^{[1
]}

Granzow, Torsten ^{[1
]}

von Seggern, Heinz ^{[1
]}

Klein, Andreas ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 10期

关键词：

THIN-FILM CAPACITORS; FERROELECTRIC MEMORIES; HETEROSTRUCTURES; PHYSICS; OXIDES; FABRICATION; IMPRINT;

D O I：

10.1063/1.3512969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of Pt, tin-doped In2O3, and RuO2 electrodes on the electrical fatigue of bulk ceramic Pb(Zr, Ti)O-3 (PZT) has been studied. Schottky barrier heights at the ferroelectric/electrode interfaces vary by more than one electronvolt for different electrode materials and do not depend on crystallographic orientation of the interface. Despite different barrier heights, hysteresis loops of polarization, strain, permittivity, and piezoelectric constant and the switching kinetics are identical for all electrodes. A 20% reduction in polarization after 10(6) bipolar cycles is observed for all the samples. In contrast to PZT thin films, the loss of remanent polarization with bipolar switching cycles does not significantly depend on the electrode material. (C) 2010 American Institute of Physics. [doi:10.1063/1.3512969]

引用

页数：7

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