Magnetoresistance of magnetic tunnel junctions in the presence of a nonmagnetic layer

被引:52
作者
Zhang, S [1 ]
Levy, PM
机构
[1] Univ Missouri, Dept Phys, Rolla, MO 65409 USA
[2] NYU, Dept Phys, New York, NY 10003 USA
关键词
D O I
10.1103/PhysRevLett.81.5660
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We find that electron propagation across a uniform nonmagnetic metallic layer d(i) in a magnetically layered structure is coherent up to a critical length d(c). This provides a possible explanation for the slow decay of the magnetoresistance of magnetic tunnel junctions when a layer of Cu or Ag is inserted between the magnetic electrode and the barrier. However, for many (most) structures the roughness of the interfaces breaks the coherence for d(i) << d(c). While the loss of coherence is not fatal for the magnetoresistance of metallic multilayers, it is for tunnel junctions. The quantum well states arising from the insertion of a nonmagnetic layer in a magnetic tunnel junction do not promote magnetoresistance.
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页码:5660 / 5663
页数:4
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