Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates

被引：19

作者：

Ragnarsson, LÅ ^{[1
]}

Guha, S ^{[1
]}

Bojarczuk, NA ^{[1
]}

Cartier, E ^{[1
]}

Fischetti, MV ^{[1
]}

Rim, K ^{[1
]}

Karasinski, J ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 10期

关键词：

aluminum oxide; effective mobility; gate dielectric; high-k; remote-polar-phonon scattering;

D O I：

10.1109/55.954921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-effective mobilities are demonstrated in AI(2)O(3) based n-channel MOSFETs with AI gates. The AI(2)O(3) was grown in ultra-high vacuum using a reactive atomic beam deposition system. The mobility with maximum values at approximately 270 cm(2)/Vs, is found to approach that of SiO2 based MOSFETs at higher fields.

引用

页码：490 / 492

页数：3

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