Progress in CuInS2 submodules

被引：6

作者：

Klaer, J ^{[1
]}

Luck, I ^{[1
]}

Siemer, K ^{[1
]}

Klenk, R ^{[1
]}

Bräunig, D ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915899

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Photovoltaic devices of different size based on CulnS(2) thin film absorbers have been prepared with a layer structure glass/Mo/CulnS(2)/CdS/ZnO. The CulnS(2) absorber layers have been grown by a sequential process consisting of DC sputter deposition of copper and indium followed by sulfurization in elemental sulfur vapor. Total area efficiencies of 11.4 % and 9.4 % have been reached on 0.5 and 6.2 cm(2) single cells, respectively. A 16.2 cm2 submodule with 7 integrated series connected cells on a 5x5 cm2 glass substrate reached 9.2 % efficiency under AM 1.5. The superior performance of the smaller area devices is mainly due to better fill factor while the open circuit voltage of the submodule reaches 5.1 V which is the sevenfold value of the single cell devices. A lower short circuit current of the submodule compared to single cells is due to loss of active area by the integrated series connection. Single module cells of different width without grid but with ZnO of different thickness have been used for module optimization.

引用

页码：559 / 562

页数：4