External radiative quantum efficiency of 96% from a GaAs/GaInP heterostructure

被引：131

作者：

Gauck, H

Gfroerer, TH

Renn, MJ

Cornell, EA

Bertness, KA

机构：

[1] UNIV COLORADO,JOINT INST LAB ASTROPHYS,BOULDER,CO 80309

[2] NATL INST STAND & TECHNOL,BOULDER,CO 80309

[3] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1997年 / 64卷 / 02期

关键词：

PACS: 78.66.Fd; 44.60.+k; 78.20.Ci;

D O I：

10.1007/s003390050455

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96% at room temperature using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blueshifted by up to 1.4 kT. In this case, external efficiencies exceeding 97.5% would yield optical refrigeration in the solid state.

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页码：143 / 147

页数：5

相关论文

共 9 条

[1] 29.5-PERCENT-EFFICIENT GALNP/GAAS TANDEM SOLAR-CELLS [J].

BERTNESS, KA ;

KURTZ, SR ;

FRIEDMAN, DJ ;

KIBBLER, AE ;

KRAMER, C ;

OLSON, JM .

APPLIED PHYSICS LETTERS, 1994, 65 (08) :989-991

[2] ONE-WATT GAAS P-N JUNCTION INFRARED SOURCE [J].

CARR, WN ;

PITTMAN, GE .

APPLIED PHYSICS LETTERS, 1963, 3 (10) :173-175

[3] Laser cooling in the condensed phase by frequency up-conversion [J].

Clark, JL ;

Rumbles, G .

PHYSICAL REVIEW LETTERS, 1996, 76 (12) :2037-2040

[4] EVIDENCE OF REFRIGERATING ACTION BY MEANS OF PHOTON EMISSION IN SEMICONDUCTOR DIODES [J].

DOUSMANIS, GC ;

PETZINGER, KG ;

NELSON, H ;

MUELLER, CW .

PHYSICAL REVIEW, 1964, 133 (1A) :A316-A318

[5] OBSERVATION OF LASER-INDUCED FLUORESCENT COOLING OF A SOLID [J].

EPSTEIN, RI ;

BUCHWALD, MI ;

EDWARDS, BC ;

GOSNELL, TR ;

MUNGAN, CE .

NATURE, 1995, 377 (6549) :500-503

[6] OMVPE GROWTH OF GALLIUM INDIUM-PHOSPHIDE ON THE (100) GALLIUM-ARSENIDE USING ADDUCT COMPOUNDS [J].

MINAGAWA, S ;

NAKAMURA, H ;

SANO, H .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) :377-384

[7] ULTRALOW RECOMBINATION VELOCITY AT GA0.5IN0.5P/GAAS HETEROINTERFACES [J].

OLSON, JM ;

AHRENKIEL, RK ;

DUNLAVY, DJ ;

KEYES, B ;

KIBBLER, AE .

APPLIED PHYSICS LETTERS, 1989, 55 (12) :1208-1210

[8] ULTRAHIGH SPONTANEOUS EMISSION QUANTUM EFFICIENCY, 99.7-PERCENT INTERNALLY AND 72-PERCENT EXTERNALLY, FROM ALGAAS/GAAS/ALGAAS DOUBLE HETEROSTRUCTURES [J].

SCHNITZER, I ;

YABLONOVITCH, E ;

CANEAU, C ;

GMITTER, TJ .

APPLIED PHYSICS LETTERS, 1993, 62 (02) :131-133

[9] VANDERWAALS BONDING OF GAAS EPITAXIAL LIFTOFF FILMS ONTO ARBITRARY SUBSTRATES [J].

YABLONOVITCH, E ;

HWANG, DM ;

GMITTER, TJ ;

FLOREZ, LT ;

HARBISON, JP .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2419-2421