Growth of NiO(100) layers on Ag(100): Characterization by scanning tunneling microscopy

被引：61

作者：

Bertrams, T

Neddermeyer, H

机构：

[1] Fachbereich Physik, Martin-Luther-Univ. Halle-Wittenberg

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期

关键词：

D O I：

10.1116/1.588416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have prepared thin ordered NiO(100) films by evaporation of Ni in an O-2 atmosphere onto Ag(100). The films have been analyzed by using scanning tunneling microscopy and low-energy electron diffraction. For room temperature deposition a c(1 x 2) Ni/O Ag structure in two orthogonal domains is obtained in the submonolayer coverage range. Annealing such a film produces regular islands with NiO(100) double layers. For higher coverage (five monolayers) a layer-by-layer-like growth mode is obtained. (C) 1996 American Vacuum Society.

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页码：1141 / 1144

页数：4

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