A monolithic CMOS RF power amplifier has been designed and fabricated in a standard 0.8-mu m CMOS technology and shown to provide 1-W of output power at 824-849MHz to a 50-ohm load from a single 2.5-V supply. The prototype amplifier has a measured drain efficiency of 62%, an overall power-added efficiency of 42%, a power gain of 25dB, and a total die area of 1.5 mm(2).