A 2.5-V, 1-W monolithic CMOS RF power amplifier

被引:41
作者
Su, D
McFarland, W
机构
来源
PROCEEDINGS OF THE IEEE 1997 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 1997年
关键词
D O I
10.1109/CICC.1997.606611
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A monolithic CMOS RF power amplifier has been designed and fabricated in a standard 0.8-mu m CMOS technology and shown to provide 1-W of output power at 824-849MHz to a 50-ohm load from a single 2.5-V supply. The prototype amplifier has a measured drain efficiency of 62%, an overall power-added efficiency of 42%, a power gain of 25dB, and a total die area of 1.5 mm(2).
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页码:189 / 192
页数:4
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