Structure and properties of tin-doped indium oxide thin films prepared by reactive electron-beam evaporation with a zone-confining arrangement

The microstructure and electrical properties of tin-doped indium oxide thin films crystallized under the action of a temperature gradient are compared with those of films prepared under uniform temperature. This zone-confining process, coupled with slow deposition rates, causes preferential segregation of dopants from grains growing at lower temperatures toward grain boundaries located at higher temperature. Recrystallization within a chain or zone of grains on a line of equal temperature causes these grains to be oriented in the same direction. The boundaries separating grains are twin boundaries. Electronic mean free paths in the zone-confined specimens are from two to four times the average size of the grains. (C) 1996 American Institute of Physics.