Carrier mobilities in microcrystalline silicon films

被引:18
作者
Bronger, T. [1 ]
Carius, R. [1 ]
机构
[1] Forschungszentrum, IPV, D-52425 Julich, Germany
关键词
electrical properties; mobility; microcrystalline silicon; thin-film silicon;
D O I
10.1016/j.tsf.2006.11.091
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations. We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:7486 / 7489
页数:4
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