Single-Layer MoS2 Phototransistors

被引:3193
作者
Yin, Zongyou [1 ]
Li, Hai [1 ]
Li, Hong [2 ]
Jiang, Lin [1 ]
Shi, Yumeng [1 ]
Sun, Yinghui [1 ]
Lu, Gang [1 ]
Zhang, Qing [2 ]
Chen, Xiaodong [1 ]
Zhang, Hua [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
single-layer; MoS2; phototransistors; photocurrent; photoswitching; photoresponsivity; GRAPHENE OXIDE-FILMS; NANOSHEETS;
D O I
10.1021/nn2024557
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A new phototransistor based on the mechanically exfoliated single-layer MoS2 nanosheet is fabricated, and Its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of Incident-light control, prompt photoswitching, and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
引用
收藏
页码:74 / 80
页数:7
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