Nonstoichiometry and the electrical activity of grain boundaries in SrTiO3

被引:176
作者
Kim, M
Duscher, G
Browning, ND
Sohlberg, K
Pantelides, ST
Pennycook, SJ
机构
[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[2] Univ Illinois, Dept Phys, Chicago, IL 60612 USA
[3] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
关键词
D O I
10.1103/PhysRevLett.86.4056
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A combination of experiments and first-principles calculations is used to show that grain boundaries in SrTiO3 are intrinsically nonstoichiometric. Total-energy calculations reveal that the introduction of nonstoichiometry into the grain boundaries is energetically favorable and results in structures that are consistent with atomic-resolution Z-contrast micrographs. Electron energy-loss spectra provide direct evidence of nonstoichiometry. These results and calculations for nonstoichiometric grain boundaries provide an explanation of the microscopic origin of the "double Schottky barriers" that dominate the electrical behavior of polycrystalline oxides.
引用
收藏
页码:4056 / 4059
页数:4
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