High-bias-induced structure and the corresponding electronic property changes in carbon nanotubes

被引:39
作者
Chen, S
Huang, JY [1 ]
Wang, Z
Kempa, K
Chen, G
Ren, ZF
机构
[1] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA
[2] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2155116
中图分类号
O59 [应用物理学];
学科分类号
摘要
Atomic-scale microstructure changes of carbon nanotubes under high bias/high current conditions were studied by in situ high-resolution transmission electron microscopy. We found that high bias voltage caused significant structure changes, such as crystallization and elimination of amorphous coating on the surface of nanotube walls, removal of nanotube walls, and formation of atomic-scale kinks. These structural changes are attributed to high temperatures induced by high bias resistive heating on the nanotubes. These structural changes cause dramatic electronic property changes of the nanotubes correspondingly. The results provide an efficient route to tailor the electronic properties of nanotubes by appropriate structural modifications. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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