Multicusp sources for ion beam projection lithography

被引：8

作者：

Lee, Y ^{[1
]}

Gough, RA

Kunkel, WB

Leung, KN

Vujic, J

Williams, MD

Wutte, D

Zahir, N

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Nucl Engn, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Tech Univ Vienna, Inst Allgemeine Phys, A-1060 Vienna, Austria

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1998年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.1148469

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Multicusp ion sources are capable of producing positive and negative ions with good beam quality and low energy spread. The ion energy spread of multicusp sources has been measured by three different techniques. The axial ion energy spread has been reduced by introducing a magnetic filter inside the multicusp source chamber which adjusts the plasma potential distribution. The axial energy spread is further reduced by optimizing the source configuration. Values as low as 0.8 eV have been achieved. (C) 1998 American Institute of Physics.

引用

页码：877 / 879

页数：3

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[4]

UEDA Y, 1995, P 6 INT C ION SOURC

[5]

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