Cold wall CVD generation of single-walled carbon nanotubes and in situ Raman scattering measurements of the growth stage

被引：77

作者：

Chiashi, S ^{[1
]}

Murakami, Y ^{[1
]}

Miyauchi, Y ^{[1
]}

Maruyama, S ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mech Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2004年 / 386卷 / 1-3期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/j.cplett.2003.12.126

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Catalytic CVD generation of high-purity single-walled carbon nanotubes (SWNTs) without use of an electric furnace or a hot-filament is demonstrated. High-purity SWNTs were generated from alcohol used as a carbon source with Fe/Co particles supported on zeolite by Joule heating of a silicon base plate. This technique was applied for an in situ measurement of Raman scattering during the growth stage in a vacuum chamber equipped with an SPM/Raman detector. The surface temperature was measured by a systematic shift in the silicon signal and kept at 850 degreesC. The G-band intensity of the SWNT Raman spectrum increased nearly linearly with time in the growth stage after an initial rapid increase. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：89 / 94

页数：6

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