The electric field in irradiated silicon detectors

被引:29
作者
Beattie, LJ [1 ]
Brodbeck, TJ [1 ]
Chilingarov, A [1 ]
Hughes, G [1 ]
McGarry, SA [1 ]
Ratof'f, PN [1 ]
Sloan, T [1 ]
机构
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
关键词
electric field; irradiated silicon detectors;
D O I
10.1016/S0168-9002(98)00884-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The electric field distribution inside heavily irradiated silicon particle detectors is deduced using observations of a particle and minimum ionising particle signals. In these detectors a particle signals are observed for both pf and n(+) side illumination even when the detector is only partially depleted. The observations indicate that the electric field distribution within the partially depleted detector has the contribution expected from a uniform space charge, as in unirradiated detectors, together with a strong, short range, local electric field in the vicinity of the pf electrode and a non-zero electric field in the remaining part of the detector. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:314 / 321
页数:8
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