Effect of oxygen on ion-beam induced synthesis of SiC in silicon

被引：8

作者：

Artamonov, VV ^{[1
]}

Valakh, MY ^{[1
]}

Klyui, NI ^{[1
]}

Melnik, VP ^{[1
]}

Romanyuk, AB ^{[1
]}

Romanyuk, BN ^{[1
]}

Yuhimchuk, VA ^{[1
]}

机构：

[1] NAS Ukraine, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 147卷 / 1-4期

关键词：

silicon carbide; ion implantation; oxygen;

D O I：

10.1016/S0168-583X(98)00607-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The properties of Si-structures with a buried silicon carbide (SIC) layer created by high-dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. The effect of additional oxygen implantation on the peculiarities of SIC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layer is more effectively formed in Cz-Si or in Si (Cz-or Fz-) subjected to additional oxygen implantation. So we can conclude that oxygen in silicon promotes the SiC layer formation due to SiOx precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed. Carbon segregation and amorphous carbon film formation on SiC grain boundaries were revealed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：256 / 260

页数：5

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