Microstructure and infrared reflectance modulation properties in DC-sputtered tungsten oxide films

被引：13

作者：

Zhang, Jun ^{[1
,2
]}

Wang, Xiu-li ^{[1
,2
]}

Lu, Yuan ^{[3
]}

Qiao, Ya ^{[3
]}

Xia, Xin-hui ^{[1
,2
]}

Tu, Jiang-ping ^{[1
,2
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[3] Hefei Elect Engn Inst, Key Lab Infrared & Low Temp Plasma Anhui Prov, Hefei 230037, Peoples R China

来源：

JOURNAL OF SOLID STATE ELECTROCHEMISTRY | 2011年 / 15卷 / 10期

关键词：

Tungsten oxide; Thin film; Electrochromism; Infrared reflectance modulation; INDIUM-TIN OXIDE; WO3; THIN-FILMS; ELECTROCHROMIC PROPERTIES; EMITTANCE MODULATION; WATER;

D O I：

10.1007/s10008-010-1224-4

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Tungsten oxide (WO3) films were deposited on indium tin oxide glass by reactive DC magnetron sputtering of a tungsten target in an oxygen and argon atmosphere at different substrate temperatures. Infrared reflectance modulation properties of the films were investigated in the wavelength range of 2.5-25 mu m. The morphology and structure of the films are strongly dependent on the substrate temperature, and therefore have a great influence on infrared reflectance modulation properties. The charge capacity and diffusion coefficient of H+ ions in WO3 films decrease, and the infrared reflectance modulation and color efficiency first increase and then decrease with increasing the deposition temperature. The values achieve a maximum of 40% and 18.5 cm(2) C-1, respectively, at 9 mu m and 250 A degrees C.

引用

页码：2213 / 2219

页数：7

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