A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications

被引：15

作者：

Maher, H ^{[1
]}

Décobert, J ^{[1
]}

Falcou, A ^{[1
]}

Le Pallec, M ^{[1
]}

Post, G ^{[1
]}

Nissim, YI ^{[1
]}

Scavennec, A ^{[1
]}

机构：

[1] France Telecom, CNET, DTD, Lab Bagneux, F-92225 Bagneux, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 01期

关键词：

D O I：

10.1109/16.737438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A triple channel HEMT structure grown on InP has been developed (the "Camel" HEMT), Starting from a dual channel (InGaAs/LnP) HEMT that utilizes both the high electron mobility of InGaAs and the low impact ionization coefficient of InP, a third InGaAs channel as well as a quaternary carrier supply layer have been introduced to improve the electron transfer and thus the transistor performance. The design of the new transistor structure and its fabrication technology are described. Static and dynamic performances for an 0.8 m gate length Camel HEMT are presented and compared to standard double channel HEMT transistors that are fabricated with the same geometry and process conditions. The results show that this new structure offers a very good tradeoff between high breakdown voltage and current gain cutoff frequency.

引用

页码：32 / 37

页数：6

共 6 条

[1] EFFECT OF SI MOVEMENT ON THE ELECTRICAL-PROPERTIES OF INVERTED ALINAS-GAINAS MODULATION DOPED STRUCTURES [J].

BROWN, AS ;

METZGER, RA ;

HENIGE, JA ;

NGUYEN, L ;

LUI, M ;

WILSON, RG .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3610-3612

[2]

CHERTOUK M, 1995, SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, P737, DOI 10.1109/ICIPRM.1995.522249

[3]

ENOKI T, 1995, IEEE T ELECT DEV AUG, V42

[4] Comparative investigation of gate leakage current in single and double channel InP HEMT [J].

Ladner, C ;

Berthelemot-Aupetit, C ;

Nezzari, A ;

Decobert, J ;

Harmand, JC ;

Post, G ;

Vigier, P ;

Dumas, JM .

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, :505-508

[5]

MAHER H, 1997, P J NAT MICR, P172

[6] High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts [J].

Shealy, JB ;

Matloubian, M ;

Liu, TY ;

Thompson, MA ;

Hashemi, MM ;

Denbaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (11) :540-542

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