Temperature distribution in advanced power electronics systems and the effect of phase change materials on temperature suppression during power pulses

被引:46
作者
Evans, AG [1 ]
He, MY
Hutchinson, JW
Shaw, M
机构
[1] Princeton Univ, Mat Inst, Princeton, NJ 08540 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[4] Rockwell Int Corp, Thousand Oaks, CA 91360 USA
关键词
D O I
10.1115/1.1370376
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A thermal analysis has been performed for a package design pertinent to power electronics. The objective has been the derivation of straightforward expressions that relate the materials used and their physical dimensions to the power input and the junction temperature. This has been done for both steady-state operating conditions and for pulses. The role of phase change materials (PCMs) in suppressing temperature elevations during pulses is also addressed.
引用
收藏
页码:211 / 217
页数:7
相关论文
共 13 条
[1]  
*ASM INT, 1986, ASM EL MAT HDB, V1
[2]   Thermal performance of a latent heat energy storage ventilated panel for electric load management [J].
Laouadi, A ;
Lacroix, M .
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 1999, 42 (02) :275-286
[3]   The effects of material properties on heat dissipation in high power electronics [J].
Lu, TJ ;
Evans, AG ;
Hutchinson, JW .
JOURNAL OF ELECTRONIC PACKAGING, 1998, 120 (03) :280-289
[4]   Thermal management of high power electronics with phase change cooling [J].
Lu, TJ .
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2000, 43 (13) :2245-2256
[5]   Heat transfer in open-cell metal foams [J].
Lu, TJ ;
Stone, HA ;
Ashby, MF .
ACTA MATERIALIA, 1998, 46 (10) :3619-3635
[6]  
McCluskey F. P., 1997, HIGH TEMPERATURE ELE
[7]  
*NASA, 1971, PHAS CHANG MAT HDB
[8]  
*NASA, 1074 NASA
[9]  
Neugebauer C. A., 1986, The Packaging of Power Semiconductor Devices, V7th
[10]  
SZE SM, 1981, PHYSICS SEMICONDUCTO