DC photoconductivity study of semi-insulating Cd1-xZnxTe crystals

被引：35

作者：

Cui, Y ^{[1
]}

Wright, GW

Ma, X

Chattopadhyay, K

James, RB

Burger, A

机构：

[1] Fisk Univ, Ctr Photon Mat & Devices, Nashville, TN 37208 USA

[2] Sandia Natl Labs, Livermore, CA 94550 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2001年 / 30卷 / 06期

基金：

美国国家航空航天局;

关键词：

DC photocurrent; surface recombination; CZT; detector performance; gamma-ray detectors;

D O I：

10.1007/BF02665871

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature direct current (DC) photocurrents were measured for detector grade Cd1-xZnxTe (CZT) crystals in the spectral range of 400-1000 nm as a function of light intensity and voltage. The photocurrent data were analyzed and fit to a theoretical model to extract the electrical transport properties for high-resistivity detector grade CZT material. Using the DC photocurrent measurements, the mobility-lifetime (mu tau) products and the surface recombination velocities for both electrons and holes were measured. For this study the CZT detectors had Au contacts, and the surfaces were treated in a standard 5% bromine in methanol etching solution. The correlation of the DC photocurrent measurements and detector performance is also reported.

引用

页码：774 / 778

页数：5

共 17 条

[1] CdZnTe strip detectors for astrophysical arc second imaging and spectroscopy: Detector performance and radiation effects [J].

Bartlett, LM ;

Stahle, CM ;

Palmer, D ;

Barbier, LM ;

Barthelmy, SD ;

Birsa, F ;

Gehrels, N ;

Krizmanic, JF ;

Kurczynski, P ;

Odom, J ;

Parsons, AM ;

Sappington, C ;

Shu, P ;

Teegarden, BJ ;

Tueller, J .

GAMMA-RAY AND COSMIC-RAY DETECTORS, TECHNIQUES, AND MISSIONS, 1996, 2806 :616-628

[2] Charge loss between contacts of CdZnTe pixel detectors [J].

Bolotnikov, AE ;

Cook, WR ;

Harrison, FA ;

Wong, AS ;

Schindler, SM ;

Eichelberger, AC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 432 (2-3) :326-331

[3]

Bube R.H., 1992, Photoelectronic Properties of Semiconductors

[4] Investigation of electrical contacts for Cd1-xZnxTe nuclear radiation detectors [J].

Burger, A ;

Chen, H ;

Tong, J ;

Shi, D ;

George, MA ;

Chen, KT ;

Collins, WE ;

James, RB ;

Stahle, CM ;

Bartlett, LM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (03) :934-938

[5] CARRIER SURFACE GENERATION AND RECOMBINATION EFFECTS IN PHOTOCONDUCTION OF HGL2 SINGLE-CRYSTALS [J].

BURSHTEIN, Z ;

AKUJIEZE, JK ;

SILBERMAN, E .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3182-3187

[6] Surface passivation of cadmium zinc telluride radiation detectors by potassium hydroxide solution [J].

Chattopadhyay, K ;

Hayes, M ;

Ndap, JO ;

Burger, A ;

Lu, WJ ;

McWhinney, HG ;

Grady, T ;

James, RB .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (06) :708-712

[7] Passivation of CdZnTe surfaces by oxidation in low energy atomic oxygen [J].

Chen, H ;

Chattopadhyay, K ;

Chen, KT ;

Burger, A ;

George, MA ;

Gregory, JC ;

Nag, PK ;

Weimer, JJ ;

James, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (01) :97-101

[8] Low-temperature photoluminescence of detector grade Cd1-xZnxTe crystal treated by different chemical etchants [J].

Chen, H ;

Tong, J ;

Hu, Z ;

Shi, DT ;

Wu, GH ;

Chen, KT ;

George, MA ;

Collins, WE ;

Burger, A ;

James, RB ;

Stahle, CM ;

Bartlett, LM .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3509-3512

[9] Study of oxidized cadmium zinc telluride surfaces [J].

Chen, KT ;

Shi, DT ;

Chen, H ;

Granderson, B ;

George, MA ;

Collins, WE ;

Burger, A ;

James, RB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :850-853

[10] STUDY OF ELECTROLESS AU FILM DEPOSITION ON ZNCDTE CRYSTAL-SURFACES [J].

GEORGE, MA ;

COLLINS, WE ;

CHEN, KT ;

HU, ZY ;

EGARIEVWE, SU ;

ZHENG, Y ;

BURGER, A .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) :3134-3137

← 1 2 →