Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasma

被引：15

作者：

Min, Su Ryun ^{[1
]}

Cho, Han Na ^{[1
]}

Li, Yue Long ^{[1
]}

Chung, Chee Won ^{[1
]}

机构：

[1] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 11期

关键词：

zinc oxide; high density plasma; dry etching; HBr;

D O I：

10.1016/j.tsf.2007.08.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The etching characteristics of ZnO thin films were examined in an HBr/Ar gas mix using an inductively coupled plasma reactive ion etching system. The etch rate and etch profile were systematically investigated as a function of gas concentration. In addition, the effects of etch parameters such as coil rf power, dc-bias voltage, and gas pressure were studied. As the HBr concentration increased, the etch rate of the ZnO films gradually decreased while the etch profile was improved. Surface analyses including X-ray photoelectron spectroscopy and atomic force microscopy were employed to elucidate the etch mechanism of ZnO in an HBr/Ar chemistry. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：3521 / 3529

页数：9

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