Small polaron formation in dangling-bond wires on the Si(001) surface

被引:18
作者
Bowler, DR [1 ]
Fisher, AJ [1 ]
机构
[1] UCL, Dept Phys & Astron, Gower St, London WC1E 6BT, England
关键词
D O I
10.1103/PhysRevB.63.035310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
From electronic structure calculations, we find that carriers injected into dangling-bond atomic wires on the Si(001) surface will self-trap to form localized polaron states. The self-trapping distortion takes the form of a local suppression of the buckling of the dimers in the wire, and is qualitatively different for the electron and hole polarons. This result points to the importance of polaronic effects in understanding electronic motion in such nanostructures.
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页数:4
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