Application of TEM on sub-half micron semiconductor devices

被引：5

作者：

Zhang, H ^{[1
]}

机构：

[1] PVD Technol, Appl Mat, Santa Clara, CA 95054 USA

来源：

ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES | 1998年 / 523卷

关键词：

D O I：

10.1557/PROC-523-45

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Application of transmission electron microscopy on sub-half micron devices has been illustrated in terms of process evaluation and failure analysis. For process evaluation, it is emphasized that a large number of features need to be examined in order to have reliable conclusions about the processes, while for failure analysis, the goal is to pin-point a single process step causing failure or a single source introducing the particle defect.

引用

页码：45 / +

页数：13