Chemical etching of Cu-ETP copper

被引：73

作者：

Çakir, O ^{[1
]}

Temel, H

Kiyak, M

机构：

[1] Dicle Univ, Dept Mech Engn, TR-21280 Diyarbakir, Turkey

[2] Dicle Univ, Dept Chem, TR-21280 Diyarbakir, Turkey

[3] Yildiz Tech Univ, Dept Engn Mech, TR-34349 Istanbul, Turkey

来源：

JOURNAL OF MATERIALS PROCESSING TECHNOLOGY | 2005年 / 162卷

关键词：

chemical etching; copper depth of etch; surface roughness;

D O I：

10.1016/j.jmatprotec.2005.02.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical etching is the controlled dissolution of workpiece material by contact with strong chemical solution. The process can be applied to any material. Copper is one of the extensively used engineering material in the fabrication of microelectronic components, microengineered structures and precision parts by using chemical etching process. In this study, copper is chemically etched. with two different etchants (ferric chloride and cupric chloride) at 50 degrees C. The effects of selected etchants and machining conditions on the depth of etch and surface roughness were investigated. The experimental study provided that ferric chloride produced the fastest chemical etch rate, but cupric chloride produced the smoothest surface quality. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：275 / 279

页数：5

共 25 条

[1]

ALLEN DM, 1993, PHOTOCHEM MACH I J, P4

[2]

Allen DM., 1986, PRINCIPLES PRACTICE

[3] FACTORS AFFECTING OCCURRENCE OF FLAWS IN ETCHED WIRING [J].

ANDES, RV .

INDUSTRIAL AND ENGINEERING CHEMISTRY, 1959, 51 (03) :291-292

[4] NEW METHOD FOR ETCHING COPPER [J].

BLACK, OD ;

CUTLER, LH .

INDUSTRIAL AND ENGINEERING CHEMISTRY, 1958, 50 (10) :1539-1540

[5]

BOGEMSCEHUTZ AF, 1978, P 1 PRINT CIRC WORLD, V3, P8

[6]

BOGENSCHEHUTZ AF, 1982, METSALL OBERFLACHE, V36, P485

[7]

BOGENSCHUTZ AF, 1979, GALVANOTECHNIK, V70, P133

[8]

BOGENSCHUTZ AF, 1978, GALVANOTECHNIK, V69, P1076

[9]

BOGENSCHUTZ AF, 1978, GALVANOTECHNIK, V69, P960

[10]

BORROWS WH, 1964, IND ENG CHEM, V3, P149

← 1 2 3 →