Formation of a ripple pattern at a water/silicon interface using an oscillating bubble

被引：8

作者：

Yonekubo, H

Katayama, K

Sawada, T

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Kashiwa, Chiba 2778561, Japan

[2] MIT, Dept Chem, Cambridge, MA 02139 USA

[3] Tokyo Univ Agr & Technol, Div Chem Technol, Tokyo 1848588, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 04期

关键词：

D O I：

10.1007/s00339-005-3269-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A single femtosecond laser pulse was irradiated at a water/silicon interface, and the processed surface was investigated. Rings surrounded by ripples were found within the irradiated spot. The diameter of the rings ranged from 500 nm to 10 mu m. It is proposed that acoustic waves, caused by the oscillating motion of bubbles near the water/silicon interface, deformed the melting silicon surface. In the present work, a pulse (pulse width: 150 fs) was tightly focused in water to induce optical breakdown, and a bubble was generated at an arbitrary spot. When the power density was below the ablation threshold and above the melting threshold at the silicon surface and set above the breakdown threshold at the focus in water, a pattern was generated at a specific place and with a specific size.

引用

收藏

页码：843 / 846

页数：4

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