Reduction of positional errors in a four-point probe resistance measurement

被引:19
作者
Worledge, DC [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, MRAM Dev Alliance, IBM Infineon Technol, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1063/1.1655697
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method for reducing resistance errors due to inaccuracy in the positions of the probes in a collinear four-point probe resistance measurement of a thin film is presented. By using a linear combination of two measurements which differ by interchange of the I- and V- leads, positional errors can be eliminated to first order. Experimental data measured using microprobes show a substantial reduction in absolute error from 3.4% down to 0.01%-0.1%, and an improvement in precision by a factor of 2-4. The application of this technique to the current-in-plane tunneling method to measure electrical properties of unpatterned magnetic tunnel junction wafers is discussed. (C) 2004 American Institute of Physics.
引用
收藏
页码:1695 / 1697
页数:3
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