Magnetotransport in (Ga,Mn)N ferromagnetic semiconductors grown by plasma-enhanced molecular beam epitaxy

被引：7

作者：

Ham, MH ^{[1
]}

Jeong, MC

Lee, WY

Myoung, JM

Chang, JY

Han, SH

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

[2] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 11B期

关键词：

(Ga; Mn)N; PEMBE; ferromagnetism; anomalous Hall effect; magnetotransport;

D O I：

10.1143/JJAP.42.L1372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the, ferromagnetism and magnetotransport properties in the (Ga,Mn)N epitaxial films with different Mn concentrations grown by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N epitaxial films were obviously found to exhibit ferromagnetic ordering with Curie temperature exceeding room temperature. The anomalous Hall effect is observed to persist up to 250 K and found to gradually increase-with decreasing temperature. The negative magnetoresistance was observed below 50 K. The ferromagnetism in the n-type (Ga,Mn)N is due to the Rudennan-Kittel-Kasuya-Yosida (RKKY) interaction between the localized Mn moments mediated by the electron gas.

引用

页码：L1372 / L1374

页数：3

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