Surface control of light-emitting structures based on III-nitrides

被引：8

作者：

Besyulkin, AI ^{[1
]}

Kartashova, AP ^{[1
]}

Kolmakov, AG ^{[1
]}

Krivolapchuk, VV ^{[1
]}

Lundin, WV ^{[1
]}

Mezdrogina, MM ^{[1
]}

Sakharov, AV ^{[1
]}

Shmidt, NM ^{[1
]}

Sitnikova, AA ^{[1
]}

Zakgeim, AL ^{[1
]}

Zavarin, EE ^{[1
]}

Zolotareva, RV ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

FOURTH INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES (PLMCN4) | 2005年 / 2卷 / 02期

关键词：

D O I：

10.1002/pssc.200460340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results on surface control of light-emitting structures (LES) based on MQW InGaN/GaN grown by MOCVD on (0001) sapphire substrates have been presented. For these purposes, the treatment of atomic-force-microscopy data by multifractal analyses has been applied. It was shown, that multifractal parameter (the degree of order of mosaic structure, Delta) reflects the peculiarities of the extended defect system (EDS), including mosaic structure and high density of dislocations, and correlates with the volume structural, electrical and optical properties of LES. Depending on Delta, EDS relaxes with formation of either the domain dilatation boundaries or numerous domain dislocation boundaries and these structural peculiarities influence essentially the shape of photo-and electroluminescence spectra, delayed spectra and the values of external quantum efficency. The surface control using Delta can be applied to optimize the properties of LES and the process of their creation. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：837 / 840

页数：4

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