Influence of structural defects and zinc composition variation on tee device response of Cd1-xZnxTe radiation detectors

被引：5

作者：

Yoon, H ^{[1
]}

Van Scyoc, JM ^{[1
]}

Gilbert, TS ^{[1
]}

Goorsky, MS ^{[1
]}

Brunett, BA ^{[1
]}

Lund, JC ^{[1
]}

Hermon, H ^{[1
]}

Schieber, M ^{[1
]}

James, RB ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Zinc composition variation and gross structural defects including grain and lilt boundaries, twins, and mechanical cracks in high pressure Bridgman Cd1-xZnxTe are characterized and correlated to various detector-related responses. Triple axis x-ray diffraction, double crystal x-ray topography, infrared microscopy, and etch pit density measurements are used to reveal and quantify the spatial distribution and the nature of the structural defects. Mechanical cracks in the material are found to act as conductive "shorting paths", indicated by excessive leakage currents and reduced charge (electron) collection measured along these cracks. Reduced charge collection is also obtained across grain boundaries and in regions with poor crystallinity, indicating that they serve as carrier recombination sites. Finally, the effects of the zinc composition Variation on the measured leakage current and the amount of electrons collected are found to be masked by gross structural defects. These characterization techniques provide a wealth of information which can be used not only to study the relationship between the structural and device properties of CdZnTe but also to screen production material for subsequent device fabrication.

引用

页码：115 / 120

页数：6