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Microscopic evidence for spatially inhomogeneous charge trapping in pentacene

被引：112
作者：
Muller, EM
Marohn, JA [1 ]
机构：
[1] Cornell Univ, Dept Chem & Biol Chem, Ithaca, NY 14853 USA
[2] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
来源：
ADVANCED MATERIALS | 2005年 / 17卷 / 11期
关键词：
D O I：
10.1002/adma.200401174
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Charge traps in pentacene thin-film transistors (Figure, left) have been imaged using electric force microscopy. The Figure shows a map of the trap distribution just below (middle) and well above (right) the transistor threshold voltage. It is found that the long-lived charge traps in polycrystalline pentacene are distributed inhomogeneously and do not appear to be associated with grain boundaries, as is generally assumed (see cover).
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收藏
页码：1410 / +
页数：6
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