A trapped charge model for the transient effect in CIGS solar cells

被引：1

作者：

Cuiffi, JD ^{[1
]}

Zhu, H ^{[1
]}

Fonash, SJ ^{[1
]}

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915954

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We present a model for the transient effects observed in CIGS based solar cells. By considering charge trapping and de-trapping in the CdS layer of the structure, we provide a mechanism for the observed cyclic performance changes. To complement the physical model, an AMPS computer model of a CIGS device was created and used to show that the effects of trapped charge correspond to the experimentally measured changes. The charge buildup in the CdS region is shown to reduce only the fill factor of devices, and as the computer model shows, this effect may be alleviated with higher n-type doping in the CdS layer.

引用

页码：674 / 675

页数：2