Comparison of barrier materials and deposition processes for copper integration

被引：11

作者：

Moussavi, M ^{[1
]}

Gobil, Y ^{[1
]}

Ulmer, L ^{[1
]}

Perroud, L ^{[1
]}

Motte, P ^{[1
]}

Torres, J ^{[1
]}

Romagna, F ^{[1
]}

Fayolle, M ^{[1
]}

Palleau, J ^{[1
]}

Plissonnier, M ^{[1
]}

机构：

[1] CEA G, DMEL, LETI, CEA Technol Avancees, F-38054 Grenoble 9, France

来源：

PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 1998年

关键词：

D O I：

10.1109/IITC.1998.704928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the investigation of MOCVD (Metal Organic Chemical Vapor Deposition) TiN, and IMP (Ionized Metal Plasma) Ta and TaN thin films as barrier layers for copper metallization. Evaluation of both deposition techniques including step coverage, Cu adhesion, Cu diffusion and selectivity regarding Cu-CMP process have been performed. Successful implementation with copper metallization in high aspect ratio line and via patterns is reported.

引用

页码：295 / 297

页数：3