Optical properties of porous GaAs

被引：81

作者：

Lockwood, DJ

Schmuki, P

Labbé, HJ

Fraser, JW

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Ecole Polytech Fed Lausanne, Dept Mat Sci, LC, DMX, CH-1015 Lausanne, Switzerland

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 1999年 / 4卷 / 02期

关键词：

gallium arsenide; photoluminescence; quantum confinement;

D O I：

10.1016/S1386-9477(98)00259-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The optical properties of porous GaAs formed electrochemically on n- and p-type GaAs in HCl electrolyte are reported. The porous structure comprises GaAs crystallites ranging in size from micrometers to nanometers and under certain chemical conditions other transparent crystallites of As2O3 and Ga2O3 form. Photoluminescence (PL) measurements at 295 K reveal an "infrared" PL at similar to 840 nm and a "green" PL at similar to 540 nm, which could easily be seen by the naked eye in some samples. The infrared and green PL peak wavelength and intensity varied from sample to sample consistent with an assignment to quantum confinement effects in GaAs micro- and nanocrystallites, respectively. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：102 / 110

页数：9

共 27 条

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