Photomask in-plane distortion induced during e-beam patterning

被引：8

作者：

Shamoun, B ^{[1
]}

Sprague, M ^{[1
]}

Engelstad, R ^{[1
]}

Cerrina, F ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES II | 1998年 / 3331卷

关键词：

photomask; e-beam patterning; in-plane distortions;

D O I：

10.1117/12.309581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As feature sizes decrease and the demand for throughput increases, the semiconductor industry must concentrate on pattern positioning accuracy and process efficiency. Thermomechanical distortions induced in the photomask during fabrication may act to constrain the desired range of operating conditions to meet the manufacturing requirements for pattern placement accuracy and throughput. Three-dimensional finite element heat transfer and structural models have been developed to determine the global in-plane distortions induced in the photomask during e-beam patterning. Results obtained from these models show that the thermal-induced distortions, caused by global heating, are significant. Whereas, distortions due to the mechanical loading, caused by resist in situ stress relief, are minimal and can be neglected.

引用

页码：275 / 279

页数：5