In2O3:Ge, a promising n-type thermoelectric oxide composite

被引：155

作者：

Berardan, David ^{[1
]}

Guilmeau, Emmanuel ^{[1
]}

Maignan, Antoine ^{[1
]}

Raveau, Bernard ^{[1
]}

机构：

[1] ENSICAEN, CNRS, UMR 6508, Lab CRISMAT, F-14050 Caen, France

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 146卷 / 1-2期

关键词：

indium oxide; thermopower; electrical conductivity; thermal conductivity;

D O I：

10.1016/j.ssc.2007.12.033

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the chemical, structural and transport properties of a series of In2O3 based samples with germanium doping (from 0 to 15 atom%). X-ray diffraction and scanning electron microscopy studies show that the solubility limit of Ge in In2O3 is very small and that additions of more than about 0.5 atom% Ge lead to the presence In2Ge2O7 inclusions. The electrical conductivity is strongly enhanced by Ge doping with best values exceeding 1200 S cm(-1) at room temperature. On the other hand, the thermopower decreases with Ge addition, but the thermoelectric power factor remains higher than that of undoped In2O3 and is close to 1mW m(-1) K-2 at 1100 K in In1.985Ge0.015O3. The thermal conductivity is strongly reduced by Ge additions. The dimensionless figure of merit ZT reaches 0.1 at 1273 K in In2O3 and exceeds 0.45 at 1273 K in composite compounds with nominal composition In1.8Ge0.2O3. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：97 / 101

页数：5

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