High-efficiency solar cells on edge-defined film-fed grown (18.2%) and string ribbon (17.8%) silicon by rapid thermal processing

被引：36

作者：

Rohatgi, A ^{[1
]}

Kim, DS ^{[1
]}

Nakayashiki, K ^{[1
]}

Yelundur, V ^{[1
]}

Rounsaville, B ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Univ Ctr Excellence Photovoltaics Res & Educ, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 01期

关键词：

Antireflection coatings - Crystal defects - Current voltage characteristics - Dehydrogenation - Diffusion - Dissociation - Evaporation - Hydrogenation - Ohmic contacts - Passivation - Photolithography - Plasma enhanced chemical vapor deposition - Rapid thermal annealing - Thermooxidation;

D O I：

10.1063/1.1638636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solar cell efficiencies of 18.2 and 17.8% were achieved on edge-defined film-fed grown and string ribbon multicrystalline silicon, respectively. Improved understanding and hydrogenation of defects in ribbon materials contributed to the significant increase in bulk lifetime from 1-5 mus to as high as 90-100 mus during cell processing. It was found that SiNx-induced defect hydrogenation in these ribbon materials takes place within one second at 740-750degreesC. The bulk lifetime decreases at annealing temperatures above 750 degreesC or annealing times above one second due to the enhanced dissociation of the hydrogenated defects coupled with the decrease in hydrogen supply from the SiNx film deposited by plasma enhanced chemical vapor deposition. (C) 2004 American Institute of Physics.

引用

页码：145 / 147

页数：3

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