Characteristics of a photonic bandgap single defect microcavity electroluminescent device

被引：60

作者：

Zhou, WD ^{[1
]}

Sabarinathan, J ^{[1
]}

Bhattacharya, P ^{[1
]}

Kochman, B ^{[1
]}

Berg, EW ^{[1
]}

Yu, PC ^{[1
]}

Pang, SW ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2001年 / 37卷 / 09期

关键词：

defect mode; microcavity; photonic bandgap; surface emitting;

D O I：

10.1109/3.945320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microcavity surface-emitting coherent electroluminescent device operating at room temperature under pulsed current injection is described. The microcavity is formed by a single defect in the center of a 2-D photonic crystal consisting, of a GaAs-based heterostructure. The gain region consists of two 70- Angstrom compressively strained In0.15Ga0.85As quantum wells, which exhibit a spontaneous emission peak at 940 nm. The maximum measured output power from a single device is 14.4 muW. The near-field image of the output resembles the calculated TE mode distribution in a single defect microcavity. The measured far-field pattern indicates the predicted directionality of a microcavity light source. The light-current characteristics of the device exhibit a gradual turn-on, or a soft threshold, typical of single- or few-mode microcavity devices. Analysis of the characteristics with the carrier and photon rate equations yields a spontaneous emission factor beta approximate to0.06.

引用

页码：1153 / 1160

页数：8

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