Humidity and temperature compensation in work function gas sensor FETs

被引：14

作者：

Burgmair, M ^{[1
]}

Zimmer, M ^{[1
]}

Eisele, I ^{[1
]}

机构：

[1] Univ Bundeswehr Munchen, Inst Phys, D-85577 Neuherberg, Germany

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 93卷 / 1-3期

关键词：

GasFET; work function; isothermic point; humidity suppression; guard ring; reference FET;

D O I：

10.1016/S0925-4005(03)00232-6

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Field-effect transistors with suspended gate are able to detect gas species if a sensitive film is used as gate. The FET acts as a transducer which converts adsorption induced changes of work function DeltaPhi at the surface to a corresponding change of the drain-source current Delta/(DS) in the FET channel. At operational temperatures below 80 degreesC, however, humidity induces contributions to the sensor signal and a base line drift which is not related to the sensitive film but to the transducer FET itself. An explanation will be given for this phenomenon and it will be shown that a guard ring and a second FET can largely suppress the influence of humidity at ambient temperatures. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：271 / 275

页数：5

共 8 条

[1]

[Anonymous], 1998, ULTRACLEAN SURFACE P

[2]

Burgmair M., 2002, Proceedings of IEEE Sensors 2002. First IEEE International Conference on Sensors (Cat. No.02CH37394), P439, DOI 10.1109/ICSENS.2002.1037132

[3]

BURGMAIR M, UNPUB IEEE SENS J

[4]

DOLL T, 1998, P 12 EUR C SOL STAT

[5] Low power gas detection with FET sensors [J].

Eisele, I ;

Doll, T ;

Burgmair, M .

SENSORS AND ACTUATORS B-CHEMICAL, 2001, 78 (1-3) :19-25

[6]

FUCHS A, 1998, P MICR SYST TECHN PO

[7] Low temperature hydrogen detection at high concentrations: comparison of platinum and iridium [J].

Scharnagl, K ;

Karthigeyan, A ;

Burgmair, M ;

Zimmer, M ;

Doll, T ;

Eisele, I .

SENSORS AND ACTUATORS B-CHEMICAL, 2001, 80 (03) :163-168

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO

← 1 →