Epitaxial growth of quaterthiophene thin films by organic molecular beam deposition

被引：9

作者：

Borghesi, A

Besana, D

Sassella, A

机构：

[1] Univ Milano Bicocca, INFM, I-20125 Milan, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

来源：

VACUUM | 2001年 / 61卷 / 2-4期

关键词：

organic molecular beam deposition; molecular semiconductors; thin films; epitaxy; film structure;

D O I：

10.1016/S0042-207X(00)00477-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Organic molecular beam deposition (OMBD) in ultra-high vacuum is a valuable technique to carefully control the solid-state structure and properties of molecular thin films. Quaterthiophene (4T) and alpha,omega -dihexyl-quaterthiophene (DH4T) thin alms deposited by OMBD on potassium acid phthalate are investigated by atomic force microscopy (AFM). Direct evidence of epitaxial growth of the thin films is obtained by molecular resolution AFM images. The comparison between 4T and DH4T films reveals the role of chemical substituent groups in modifying the film properties. (C) 2001 Elsevier Science Ltd. All rights reserved.

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收藏

页码：193 / 197

页数：5

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