Low temperature μc-Si film growth using a CaF2 seed layer

被引：7

作者：

Kim, DY ^{[1
]}

Ahn, BJ ^{[1
]}

Moon, SI ^{[1
]}

Won, CY ^{[1
]}

Yi, J ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Elect & Comp Engn, Jangan Gu, Suwon 440746, Kyunggi Do, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 70卷 / 04期

关键词：

mu c-Si; RPCVD; CaF2; seed layer; low temperature growth;

D O I：

10.1016/S0927-0248(01)00032-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper describes low temperature thin film Si growth by remote plasma chemical vapor deposition system for photovoltaic device applications. Using CaF2/glass substrate. we were able to achieve an improved pc-Si film at a low process temperature of 300 degreesC. The muc-Si film on CaF2/glass substrate shows that a crystalline volume fraction of 65% and dark conductivity of 1.65 x 10(-8) S/cm with the growth conditions of 50 W, 300 degreesC, 88 mTorr, and SiH4/H-2 = 1.2%. XRD analysis on muc-Si/CaF2 /glass showed crystalline film growth in (111) and (220) planes. Grain size was enlarged as large as 700 Angstrom for a muc-Si/CaF2/glass structure. Activation energy of muc-Si film was given as 0.49 eV. The muc-Si films exhibited dark-and photo-conductivity ratio of 124. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：415 / 423

页数：9

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