Low-temperature formation of device-quality SiO2/Si interfaces using electron cyclotron resonance plasma-enhanced chemical vapor deposition

被引：19

作者：

Higashi, S ^{[1
]}

Abe, D ^{[1
]}

Inoue, S ^{[1
]}

Shimoda, T ^{[1
]}

机构：

[1] Seiko Epson Corp, Base Technol Res Ctr, Nagano 3928502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 6A期

关键词：

SiO2/Si interface; ECR; PECVD; density of interface trap states;

D O I：

10.1143/JJAP.40.4171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature formation of SiO2/Si inter-faces using electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) was investigated. It was found that the density of interface trap states (D-it) decreased with decreasing substrate temperature during film deposition and performing the post deposition annealing at 333 degreesC in N-2 or H2O atmosphere. The average D-it was 3 to 4 x 10(11) cm(-2) eV(-1) when the substrate temperature was 300 degreesC, while decreasing the substrate temperature to room temperature decreased it to 1.8 x 10(10) cm(-2) eV(-1). These results indicate that device-quality-SiO2/Si-interface formation is possible using low-temperature processes of ECR PECVD and post deposition annealing.

引用

页码：4171 / 4175

页数：5

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