Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge

被引:21
作者
Ardalan, Pendar [1 ]
Pickett, Evan R. [2 ]
Harris, James S., Jr. [2 ]
Marshall, Ann F. [3 ]
Bent, Stacey F. [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Geballe Lab Adv Mat, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2951608
中图分类号
O59 [应用物理学];
学科分类号
摘要
Atomic layer deposition (ALD) of titanium dioxide (TiO2) high-kappa dielectric films on brominated Ge substrates using titanium tetrachloride and water has been studied. A strong temperature dependence was observed for the TiO2 deposition rate. An accelerated growth rate was measured for the first 15 ALD cycles at 300 degrees C; this effect is attributed to bromine desorption and resultant deposition on halide-free Ge. Results suggest that TiO2 films were deposited with no interfacial oxide layer at 300 degrees C. The films were in a crystalline anatase phase at 300 degrees C, and were amorphous when deposited at 100 degrees C. (c) 2008 American Institute of Physics.
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页数:3
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