Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions

被引：47

作者：

Higo, Y ^{[1
]}

Shimizu, H ^{[1
]}

Tanaka, M ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.1357832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed very large tunneling magnetoresistance (TMR) in Ga1-xMnxAs/AlAs/Ga1-xMnxAs ferromagnetic semiconductor tunnel junctions. A TMR ratio as high as 75% was obtained in a junction with a thin (1.5 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR ratio decreased when the applied magnetic field direction was along the [1(1) over bar $0] and [110]. This anisotropic TMR was found to be explained by the single-domain theory assuming cubic magnetic anisotropy with the easy axis of [100], which is induced by the zincblende-type Ga1-xMnxAs crystal structure. (C) 2001 American Institute of Physics.

引用

页码：6745 / 6747

页数：3

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