Hexyl-substituted oligothiophenes with a central tetrafluorophenylene unit: crystal engineering of planar structures for p-type organic semiconductors

被引:56
作者
Crouch, DJ
Skabara, PJ
Heeney, M
McCulloch, I
Coles, SJ
Hursthouse, MB
机构
[1] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England
[2] MERCK Chem, Southampton SO16 7QD, Hants, England
[3] Univ Southampton, Dept Chem, Southampton SO17 1BJ, Hants, England
关键词
D O I
10.1039/b417642a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Rigidification has been achieved in thiophene - tetrafluorophenylene architectures through strong S center dot center dot center dot F and H center dot center dot center dot F intramolecular interactions; the resulting materials are promising candidates for p-type organic field effect transistors.
引用
收藏
页码:1465 / 1467
页数:3
相关论文
共 15 条
[1]   VAN DER WAALS VOLUMES + RADII [J].
BONDI, A .
JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (03) :441-+
[2]  
Brabec CJ, 2001, ADV FUNCT MATER, V11, P15, DOI 10.1002/1616-3028(200102)11:1<15::AID-ADFM15>3.0.CO
[3]  
2-A
[4]   Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents [J].
Chang, JF ;
Sun, BQ ;
Breiby, DW ;
Nielsen, MM ;
Sölling, TI ;
Giles, M ;
McCulloch, I ;
Sirringhaus, H .
CHEMISTRY OF MATERIALS, 2004, 16 (23) :4772-4776
[5]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[6]  
2-9
[7]   Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors [J].
Facchetti, A ;
Yoon, MH ;
Stern, CL ;
Katz, HE ;
Marks, TJ .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (33) :3900-3903
[8]   A combined substituent and supramolecular approach for improving the electron donor properties of 1,3-dithiole-2-thione derivatives [J].
Khan, T ;
McDouall, JJW ;
McInnes, EJL ;
Skabara, PJ ;
Frère, P ;
Coles, SJ ;
Hursthouse, MB .
JOURNAL OF MATERIALS CHEMISTRY, 2003, 13 (10) :2490-2498
[9]  
Kraft A, 1998, ANGEW CHEM INT EDIT, V37, P402, DOI 10.1002/(SICI)1521-3773(19980302)37:4<402::AID-ANIE402>3.0.CO
[10]  
2-9