Photoconduction in thin films of a ladder-type poly-para-phenylene

被引:74
作者
Barth, S
Bassler, H
Scherf, U
Mullen, K
机构
[1] Univ Marburg, Inst Phys Kern & Makromol Chem, D-35032 Marburg, Germany
[2] Univ Marburg, Zentrum Mat Wissensch, D-35032 Marburg, Germany
[3] Max Planck Inst Polymerforsch, D-55128 Mainz, Germany
关键词
D O I
10.1016/S0009-2614(98)00236-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Stationary photoconductivity has been measured on typically 100 nm thick films of a methyl-substituted ladder-type poly-para-phenylene sandwiched between indium-tin oxide (ITO) and aluminium (Al) electrodes. Three contributions to photocarrier production have been identified: (1) hole injection from the ITO and the Al-anode via dissociation of singlet excitons; (2) intrinsic carrier production via relaxed S-1 excitons; and (3) intrinsic photogeneration via non-relaxed electronic states excited by photons with an energy of 1.1 eV above the S-1 <-- S-0 0-0 absorption band. The intrinsic photoionization yield increases strongly with electric field but is virtually independent of temperature, at variance with the prediction of the conventional Onsager theory of geminate pair dissociation. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
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页码:147 / 154
页数:8
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